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| HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE(sat)typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 W Clamped inductive load, L = 100 mH TC = 25C Maximum Ratings 600 600 20 30 40 20 80 ICM = 40 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 V V V V A A A A TO-268 (D3) (IXGT) G E (TAB) TO-247 AD (IXGH) C (TAB) W C C C C G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 g g Features * International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD * High current handling capability * Latest generation HDMOSTM process * MOS Gate turn-on - drive simplicity Applications * AC motor speed control * DC servo and robot drives * DC choppers * Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode power supplies Advantages * Space savings (two devices in one package) * High power density * Suitable for surface mounting * Switching speed for high frequency applications * Easy to mount with 1 screw,TO-247 (isolated mounting screw hole) Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250mA, VGE = 0 V = 250 mA, VCE = VGE 5.0 200 1 100 1.7 2.0 VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. 96533B (7/99) (c) 2000 IXYS All rights reserved 1-4 IXGH 20N60B IXGT 20N60B Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 9 17 1500 175 40 90 11 30 15 35 0.15 150 100 0.7 15 35 0.15 220 140 1.2 0.25 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.83 K/W K/W TO-247 AD (IXGH) Outline gfs Cies Coes Cres Qg Qge Qgc td(on) t ri Eon td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 10 W Note 1 Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 10 W Note 1 200 150 1.0 Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 Note 1: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 1.5 2.49 TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXGH 20N60B IXGT 20N60B 100 TJ = 25C 200 VGE = 15V 13V 11V 9V TJ = 25C VGE = 15V 13V 11V 80 160 IC - Amperes IC - Amperes 60 40 20 5V 7V 120 80 40 0 9V 7V 5V 0 0 1 2 3 4 5 0 2 4 6 8 10 VCE - Volts VCE - Volts Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics 100 TJ = 125C 1.75 VGE = 15V 13V 11V 9V VGE = 15V VCE (sat) - Normalized 80 1.50 1.25 IC = 40A IC - Am eres 60 40 20 IC = 20A 7V 1.00 IC = 10A 0.75 0.50 5V 0 0 1 2 3 4 5 25 50 75 100 125 150 VCE - Volts TJ - Degrees C Fig. 3. High Temperature Output Characteristics Fig. 4. Temperature Dependence of VCE(sat) 100 VCE = 10V 4000 f = 1Mhz 80 60 40 TJ = 125C Capacitance - pF 1000 Ciss IC - Amperes Coss 100 Crss 20 TJ = 25C 0 3 4 5 6 7 8 9 10 10 0 5 10 15 20 25 30 35 40 VGE - Volts VCE-Volts Fig. 5. Admittance Curves Fig. 6. Capacitance Curves (c) 2000 IXYS All rights reserved 3-4 IXGH 20N60B IXGT 20N60B 3.0 TJ = 125C 6 RG = 10 4 TJ = 125C 8 2.5 E(ON) - millijoules 5 E(ON) - millijoules 3 E(ON) IC =40A E(OFF) E(OFF) - milliJoules 6 E(OFF) - millijoules 2.0 1.5 E(ON) 4 3 2 E(OFF) 2 E(ON) IC = 20A E(OFF) IC = 10A E(OFF) 4 1.0 0.5 0.0 0 10 20 30 40 1 1 0 50 0 E(ON) 2 0 0 10 20 30 40 50 60 IC - Amperes RG - Ohms Fig. 7. Dependence of EON and EOFF on IC. 15 12 IC = 20A VCE = 300V Fig. 8. Dependence of EON and EOFF on RG. 100 40 IC - Amperes VGE - Volts 10 TJ = -55 to +125C 9 6 3 0 0 20 40 60 80 100 RG = 4.7 dV/dt < 5V/ns 1 0.1 0 100 200 300 400 500 600 Qg - nanocoulombs VCE - Volts Fig. 9. Gate Charge Fig. 10. Turn-off Safe Operating Area 1 D=0.5 D=0.2 ZthJC (K/W) 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single pulse D = Duty Cycle 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 11. IGBT Transient Thermal Resistance Junction-to-Case (c) 2000 IXYS All rights reserved 4-4 |
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